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The Commensurate Phase of Al Overlayers on the Si(111) Surfaces: STM Study of the γ-Phase Surface

Published online by Cambridge University Press:  15 February 2011

M. Yoshimura ,
K. Takaoka  and
T. Yao
M. Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
K. Takaoka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
T. Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
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Abstract

We have elucidated the atomic structure of the γ-phase, which appears at 1ML coverage of Al on the Si (111) surface, using scanning tunneling Microscopy (STM). The structure is based on the 9×9 dimer-adatom-stacking fault (DAS) structure. Al atoms replace Si atoms in the second layer of the DAS Model. As a result, excess silicon atoms are produced during the formation of the γ-phase and migrate on the surface to form Monatomic-height islands. The area ratio of the upper and lower terraces is in good agreement with the proposed formation Mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 27
Copyright
Copyright © Materials Research Society 1994

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