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Comparative Study of Structure and Hydrogen Incorporation in Glow Discharge a-Si:C:H and a-Si:N:H Alloys

Published online by Cambridge University Press:  26 February 2011

W. Beyer ,
H. Wagner  and
H. Mell
W. Beyer
Affiliation:
Institut für Grenzfächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Jülich, Federal Republic of Germany
H. Wagner
Affiliation:
Institut für Grenzfächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Jülich, Federal Republic of Germany
H. Mell
Affiliation:
Fachbereich Physik, Universität Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
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Abstract

Plasma-deposited a-Si:C:H and a-Si:N:H alloys both show a rapidly rising hydrogen incorporation with increasing carbon or nitrogen content. For hydrogen concentrations exceeding ∼ 20 at.%, the host material starts to lose its connectiveness leading to the formation of a void structure as evidenced by hydrogen evolution and infrared absorption. Raising the substrate temperature leads to a reduction of the hydrogen concentration, to an increase of the Si-C and Si-N bond concentration and to a more compact naterial. However, for a-Si:C:H films it leads also to graphitic carbon bonds. The widening of the optical bandgap of a-Si:C:H films up to about 50 at.% of carbon is almost entirely due to the increased hydrogen incorporation whereas for a-Si:N:H films both hydrogen and nitrogen incorporation plays a role.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 317
Copyright
Copyright © Materials Research Society 1987

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