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Comparison Between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes

Published online by Cambridge University Press:  26 February 2011

G. Winborne ,
L E Xu  and
M. Silver
G. Winborne
Affiliation:
Department of Physics And Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
L E Xu
Affiliation:
Permanent address: Nankai University, Tianjin, P.R. China
M. Silver
Affiliation:
Department of Physics And Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
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Abstract

The drift mobility in compensated a-Si:H as measured by standard T.O.F. is much less than in intrinsic material; presumably due to charge defects. In order to determine other differences in behavior between compensated and intrinsic material, we have studied the transient forward bias current of each in double injecting devices. We have found that: a) a much higher voltage is required in compensated material to obtain the same current as in the intrinsic; b) intrinsic and compensated samples show similar transient current responses but the compensated devices are much slower; c) the steady state current degrades in the compensated current but not in the intrinsic; and d) mobilities obtained by the voltage pulse technique in compensated material are at least three times larger than by the standard T.O.F. technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 501
Copyright
Copyright © Materials Research Society 1988

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References

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