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A Comparison of Atomic Mixing Behaviour of Cu- Au and Cu- W Systems for Room Temperature and Low Temperature Irradiation

Published online by Cambridge University Press:  15 February 2011

Z.L. Wang ,
J.F.M. Westendorp ,
S. Doorn  and
F.W. Saris
Z.L. Wang
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam The Netherlands
J.F.M. Westendorp
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam The Netherlands
S. Doorn
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam The Netherlands
F.W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam The Netherlands
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Abstract

300 keV Kr ion irradiations with doses varying from 2× 1015 to 2× 1016 at/cm2 have been applied to initiate mixing of Cu-Au and Cu-W systems. As under normal thermodynamic conditions the Cu-Au system is miscible whereas the Cu-W system is not, the comparison of both systems provides a test for the current theories on ion-beam mixing. A pronounced difference in mixing phenomena is observed for both systems; in the Cu-Au system atomic displacements are one order of magnitude larger than those in the Cu-W system. In addition, a drastic temperature dependence of ion-beam mixing in the Cu-Au system has been found. The mixing is suppressed by lowering the substrate temperature during irradiation. These results show that radiation enhanced diffusion is the mechanism underlying the ion-beam mixing of Cu and Au. Results for the Cu-W system are consistent with a collisional mixing model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 59
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Visiting scientist from Beijing Normal University, Beijing, China.

References

REFERENCES

1.Mayer, J.W., Tsaur, B.Y., Lau, S.S. and Hung, L-S., Nucl.Instr.& Meth. 182/183 (1981) 1.Google Scholar
2.Matteson, S., Roth, J. and Nicolet, M.-A., Rad.Effects 42 (1979) 217.Google Scholar
3.Mayer, J.W., Lau, S.S. and Tsaur, B.Y., in: “Ion Implantation Metallurgy” (Academic Press, New York, 1980) 37.Google Scholar
4.Littmark, U. and Hofer, W.O., Nucl.Instr.& Meth. 168 (1980) 329.Google Scholar
5.Sigmund, P. and Grass-Marti, A., Nucl.Instr.& Meth. 182/183 (1981) 25.Google Scholar
6.Sizmann, R., J.Nucl.Mat., 69&70 (1968) 386.Google Scholar
7.Marwick, A.D. and Piller, R.C., Nucl.Instr.& Meth. 182/183 (1981) 121.Google Scholar
8.Westendorp, H., Wang, Z.L. and Saris, F.W., to be published in Proc.of 9th international conference on atomic collision in solids,Lyon,1981.Google Scholar
9.Andersen, H.H., Appl. Phy. 18 (1979) 131.Google Scholar
10.Sigmund, P., Appl.Phys.Lett. 14 (1969) 114, and references therein.Google Scholar
11.Schiøtt, H, Thomsen, P.V., Radiat.Eff. 14 (1972) 39.Google Scholar
12.Winterbon, K.B., Ion Implantation range and energy deposition distributions; Low Incident Ion Energies, Vol. 2 (Plenum Press, New York, 1975).Google Scholar
13.Myers, S.M., Nucl.Instr.& Meth. 168 (1980) 265.Google Scholar