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Comparison of Dark and Light-Induced Annealing of Metastable Defects in a-Si:H

Published online by Cambridge University Press:  16 February 2011

Helena Gleskova ,
M. Nakata  and
S. Wagner
Helena Gleskova
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
M. Nakata
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
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Abstract

We propose a rate law that unifies the dark and light-induced annealing of metastable defects in hydrogenated Amorphous silicon (a-Si:H). Its form is dN/dt ∼ - C Naf (T), where N is the defect density, C the concentration of free electrons (holes), f (T) a dispersive function, t the time, and T the temperature. Special dark and light-annealing experiments, designed to keep the free electron density constant, were conducted to eliminate C from the rate law. We find that f (T) for the dark annealing process differs from that for light-annealing. We calculated the thermal activation energies for the decay of N to 1/e of its initial value. They are 1.56±0.2 eV for dark annealing and 0.91±0.2 eV for light-induced annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 245
Copyright
Copyright © Materials Research Society 1994

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