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Comparison of the Incorporation of Various Transition Metals into GaN by MOCVD

Published online by Cambridge University Press:  01 February 2011

Matthew H Kane ,
William Fenwick ,
Nola Li ,
Shalini Gupta ,
Eun Hyun Park  and
Ian T Ferguson
Matthew H Kane
Affiliation:
Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
William Fenwick
Affiliation:
fenwick@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Nola Li
Affiliation:
nola@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Shalini Gupta
Affiliation:
guptasha@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Eun Hyun Park
Affiliation:
ehpark@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Ian T Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
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Abstract

The incorporation of transition metals in GaN has long been of interest in spintronics due to theoretical predictions of room temperature ferromagnetism in these materials. However, the mechanism of the observed ferromagnetism of the nitride-based DMS is still controversial, and may originate from a carrier-mediated, defect-related or nanoscale clustering mechanism. In this work, we present a comparative study of the incorporation of various transition metals and their effect on the optical, structural, and magnetic properties of GaN. Metal-organic chemical vapor deposition (MOCVD) has been employed to produce epitaxial films of varying thickness and manganese and iron doping using bis-cyclopentyldienyl(magnanese,iron) as the transition metal sources. High-resolution X-ray diffraction reveals no secondary phases under optimized growth conditions. Magnetic hysteresis is observed at room temperature in both GaMnN and GaFeN, though the strength of the magnetic ordering is roughly an order of magnitude weaker in the Fe-alloyed samples. Increasing Mn concentrations significantly affect long-range lattice ordering, and the observation of local vibrational modes (LVMs) supports the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. Such vacancies form shallow donor complexes and thus contribute to self-compensation. A disorder-induced mode at 300 cm−1 and a LVM due to vacancies at 669 cm-1 were revealed by Raman spectroscopy.

Keywords

spintronicmetalorganic depositionnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-04
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Dietl, T., Ohno, H., et al., Science 287 (2000) 1019.Google Scholar
[2] Graf, T., Gjukic, M., et al., Applied Physics Letters 81 (2002) 5159.Google Scholar
[3] Kang, J., Chang, K. J., et al., Journal of Superconductivity 18 (2005) 55.Google Scholar
[4] Rao, B. K. and Jena, P., Physical Review Letters 89 (2002) 185504.Google Scholar
[5] Kane, M. H., Asghar, A., et al., Semicond. Sci. Technol. 20 (2005) L5.Google Scholar
[6] Haboeck, U., Siegle, H., et al., Physica Status Solidi C 0 (2003) 1710.Google Scholar
[7] Limmer, W., Ritter, W., et al., Appl. Phys. Lett. 72 (1998) 2589.Google Scholar