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Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition

Published online by Cambridge University Press:  21 March 2011

Byoung-Youp Kim ,
Seung-Hyun Lee ,
Sang-Gee Park ,
Ki-Young Oh ,
Juho Song  and
Do-Heyoung Kim
Byoung-Youp Kim
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Seung-Hyun Lee
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Sang-Gee Park
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Ki-Young Oh
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Juho Song
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Do-Heyoung Kim
Affiliation:
Faculty of Applied Chemistry, College of Engineering, Chonnam National University300 Yongbong-dong, Buk-Ku, KwangJu 500-757, Korea
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Abstract

This paper compared two different film deposition processes for formation of TiN barrier layers, conventional TiCl4-based chemical vapor deposition and atomic layer deposition (ALD). The 30nm thick TiN film deposited by conventional TiCl4-based CVD at the process temperature of 600°C followed by NH3 post-deposition anneal showed about 180 μΩcm of resistivity, over 95 % of step coverage for the pattern aspect ratio of 6 on 0.35 μm contact diameters, and below 2 at.% of chlorine contents in the film. Meanwhile, the films deposited by ALD at 100°C lower process temperature than CVD showed much better film properties even without post-deposition anneal. It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics. More detailed material analysis was done by AFM, SEM, and AES.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O7.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Price, J. E. Borland, J. O. and Selbrede, S., Thin Solid Films 236 (1993) 311–318 Google Scholar
[2] Homoyoun, Talieh, Avi, Tepman, Thi, Kieu Hoa and Chien-Rhone, Wang, US Patent 5171412Google Scholar
[3] Liubo, Hong, Hougong, Wang, Gongda, Yao and Zheng, Xu, US Patent 6077402Google Scholar
[4] Travis, E. O. and Fiordalice, R. W., Thin Solid Films, 236(1993) 325–329 Google Scholar
[5] Hillman, J. T. and Studiner, D. W., VMIC Conf. Proc. 1992, 295–297 Google Scholar
[6] Dekker, J. P., Put, P.J. van der, Veringa, H.J and Schoonman, J., J. Electrochem. Soc., Vol.141, No. 3, March 1994 787–795 Google Scholar
[7] Raaijmakers, I. J. and Yang, J., Applied Surface Science 73(1993) 31–41 Google Scholar
[8] Ishihara, K., Yamazaki, K., Hamada, H., Kamisako, K. and Tarui, Y., Jpn. J. Appl. Phys., Vol.29, No. 10 (1990) 2103–2105 Google Scholar
[9] Suntola, T., Atomic Layer Epitaxy, Handbook of Crystal Growth, 3, 601, edited by Hurle, D. T. J. (1994).Google Scholar
[10] Satta, A., Beyer, G., Maex, K., Elers, K., Haukka, S., A Vatomme, Mat. Res. Soc. Symp. Proc. Vol.. 612 (2000)Google Scholar
[11] Ritala, M., Leskela, M., Rauhala, E. and Haussalo, P., J. Electrochem. Soc., Vol.142, No.8, 1995 2731–2737 Google Scholar
[12] Ahn, S. D., Lee, H. B. and Kang, S. W., Jpn. J. Appl. Phys., Vol.39, part1, No.6A, (2000) 3349–3354 Google Scholar