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Computational Study on Polymer Filling Process in Nanoimprint Lithography for Bi-Layered Resist

Published online by Cambridge University Press:  20 March 2013

Kosei Araki ,
Masaaki Yasuda ,
Akira Horiba ,
Hiroaki Kawata  and
Yoshihiko Hirai
Kosei Araki
Affiliation:
Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
Masaaki Yasuda
Affiliation:
Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
Akira Horiba
Affiliation:
Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
Hiroaki Kawata
Affiliation:
Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
Yoshihiko Hirai
Affiliation:
Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
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Abstract

A molecular dynamics simulation was performed to study the polymer filling process in nanoimprint lithography for a bi-layered resist. The bi-layered resist consisted of PMMA resins with different molecular weights. When the mold cavity size became smaller than the polymer size of the top layer resist, the required force to fill the cavity became large. The molecular weight of the top layer dominated the filling characteristics in the bi-layered resist process.

Keywords

hot pressingnanostructurepolymer
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1499: Symposium N – Precision Polymer Materials—Fabricating Functional Assemblies, Surfaces, Interfaces and Devices , 2013 , mrsf12-1499-n05-62
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Chou, S. Y., Krauss, P. R. and Renstrom, P. J., Appl. Phys. Lett. 67, 3114 (1995).CrossRefGoogle Scholar
Chou, S. Y., Krauss, P. R. and Renstrom, P. J., J. Vac. Sci. Technol. B 14, 4129 (1996).CrossRefGoogle Scholar
Chou, S. Y., Krauss, P. R. and Renstrom, P. J., Science 272, 85 (1996).CrossRefGoogle Scholar
Hua, F., Sun, Y., Gaur, A., Meitl, M. A., Bilhaut, L., Rotkina, L., Wang, J., Geil, P., Shim, M. and Rogers, J. A., Nano Lett. 4, 2467 (2004).CrossRefGoogle Scholar
Hua, F., Gaur, A., Sun, Y., Word, M. A., Jin, N., Adesida, I., Shim, M., Shim, A. and Rogers, J. A., IEEE Trans. Nanotechnol. 5, 301 (2006).Google Scholar
Kang, J. H., Kim, K. S. and Kim, K. W., Tribol. Lett. 25, 93 (2007).CrossRefGoogle Scholar
Tada, K., Kimoto, Y., Yasuda, M., Kawata, H. and Hirai, Y., Jpn. J. Appl. Phys. 48, 06FH13 (2009).Google Scholar
Taga, A., Yasuda, M., Kawata, H. and Hirai, Y., J. Vac. Sci. Technol. B 28, C6M68 (2010).Google Scholar
Yasuda, M., Araki, K., Taga, A., Horiba, A., Kawata, H. and Hirai, Y., Microelectron. Eng. 88, 2188 (2011).CrossRefGoogle Scholar
Konishi, T., Kikuta, H., Kawata, H. and Hirai, Y., Microelectron. Eng. 83, 869 (2006).CrossRefGoogle Scholar
Okada, O., Oka, K., Kuwajima, S., Toyoda, S. and Tanabe, K., Comput. Theo. Polymer Sci. 10, 371 (2000).CrossRefGoogle Scholar
MARC : http://www.mscsoftware.com Google Scholar