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Computer Simulation of Edge Effects in a Small-Area Mesa N-P Junction Diode

Published online by Cambridge University Press:  21 March 2011

Jesse Appel ,
Bhushan Sopori  and
N.M. Ravindra
Jesse Appel
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Bhushan Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
N.M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102, USA
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Abstract

The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/ recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1123: Symposium P – Photovoltaic Materials and Manufacturing Issues , 2008 , 1123-P02-05
Copyright
Copyright © Materials Research Society 2009

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References

1. Sopori, B.L., Applied Physics Letters 52 (20), 1718–1720 (1988).Google Scholar
2. Sopori, B.L., Journal of Applied Physics 64 (10), 5264–5266 (1988).Google Scholar
3. Gummel, H.K., IEEE Transactions on Electron Devices 11, 455–465 (1964).Google Scholar
4. Hall, R.N., Physical Review 87, 387 (1952).Google Scholar
5. Shockley, W. and Read, W.T. Jr., Physical Review 87 (5), 835–842 (1952).Google Scholar
6. Grove, A.S., Deal, B.E., Snow, E.H. and Sah, C.T., Solid-State Electronics 8, 145–163 (1965).Google Scholar
7. Fitzgerald, D.J. and Grove, A.S., Surface Science 9, 347–369 (1968).Google Scholar
8. Serway, Raymond A., Physics for Scientists & Engineers, 3rd ed. (Saunders College Publishing, Philadelphia, Vol. II, p. 692 (1992).Google Scholar