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Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

Published online by Cambridge University Press:  25 February 2011

Rahul Jairath ,
Mukesh Desai ,
Matt Stell ,
Robert Tolles  and
Debra Scherber-Brewer
Rahul Jairath
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741 On assignment from National Semiconductor Corporation
Mukesh Desai
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741 On assignment from IBM (Present address: Speedfam Corporation, Phoenix, AZ)
Matt Stell
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741 On assignment from Digital Equipment Corporation
Robert Tolles
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741
Debra Scherber-Brewer
Affiliation:
Rippey Corporation, 5080 Robert J. Mathews Parkway, El Dorado Hills, CA 95762
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Abstract

Chemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels. In the case of dielectric CMP, planarization ability is dictated by the mechanical aspects of polishing such as pad rigidity, polishing pressure and speed of the polishing platen, while inherent removal rate of the dielectric material is generally a function of the polishing chemistry. Polishing rate of both, dielectric and metallic films can be significantly increased by changing the nature of the dispersed abrasive in the slurry and that of the dispersing agent. However, such changes have profound implications to the surface quality, planarity, and cleaning of the polished surface. In addition, the polishing pad plays an important role in manufacturability of metal CMP processes. This work reviews the chemistry of polishing slurries containing silica, ceria and alumina abrasives for dielectric and metal CMP. Also, the contribution of the polishing pad to CMP processes is explained. The need for balancing the chemical and mechanical aspects of polishing in order to achieve overall planarization and pattern definition is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 121
Copyright
Copyright © Materials Research Society 1994

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References

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