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The Contrast of Dislocations in X-Ray Topographs of Homogeneously Bent Silicon Crystals

Published online by Cambridge University Press:  26 February 2011

Neil Loxley  and
Brian K. Tanner
Neil Loxley
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
Brian K. Tanner
Affiliation:
Physics Department, University of Durham, South Road, Durham, DH1 3LE, U.K.
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Abstract

The contrast of dislocations in X-ray transmission topographs has been studied as a function of specimen curvature. It has been shown that in the symmetric Laue geometry, contrast differences between Lang and Hirst Curved Crystal topographs are attributable to inhomogeneous bending of the specimen wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 209
Copyright
Copyright © Materials Research Society 1987

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References

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