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The Control of Epitaxial Growth of LiNbO3 Thin Films on R-Cut Sapphire

Published online by Cambridge University Press:  25 February 2011

Norifumi Fujimura ,
Masami Kakinoki  and
Taichiro Ito
Norifumi Fujimura
Affiliation:
University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
Masami Kakinoki
Affiliation:
Graduate School, University of Osaka Prefecture
Taichiro Ito
Affiliation:
University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
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Abstract

It is argued that epitaxial films of ionically-bonded materials are more easily achieved than of covalently bonded materials. Good epitaxy can be achieved despite relatively large lattice mismatch with respect to the substrate. However, the strong influence of interfacial energy can result in difficulty in controlling the orientation of epitaxial films.

The crystallographic orientation of ionically-bonded LiNbO3 films was therefore studied. Growth orientation could be controlled by paying attention to the bonding between octahedra in the structure, and to the formation of the octahedra containing lithium and niobium ions. Lithium concentration could be increased by increasing the rf power, 02 partial pressure and total gas pressure, and decreasing the substrate temperature during deposition.

The orientation of the film changed from (012) to (100) via (110) by increasing the Li concentration in the film. The (012) and (100) films were epitaxial with respect to the substrate. In particular, the (100) films were of exce lent quality, being single crystalline with smooth surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 545
Copyright
Copyright © Materials Research Society 1992

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References

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