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Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

Published online by Cambridge University Press:  10 February 2011

H. Fujisawa ,
S. Nakashima ,
M. Shimizu  and
H. Niu
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671-2201, Japan fujisawa@elnics.eng.himeji-tech.ac.jp
S. Nakashima
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671-2201, Japan fujisawa@elnics.eng.himeji-tech.ac.jp
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671-2201, Japan fujisawa@elnics.eng.himeji-tech.ac.jp
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671-2201, Japan fujisawa@elnics.eng.himeji-tech.ac.jp
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Abstract

The grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 327
Copyright
Copyright © Materials Research Society 1999

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References

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