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Control of Growth Dynamics by Molecular Design in the MOCVD of Electronic Ceramics

Published online by Cambridge University Press:  10 February 2011

A. C. Jones
Affiliation:
Inorgtech Ltd., 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK.
T. J. Leedham
Affiliation:
Inorgtech Ltd., 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK.
P. J. Wright
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
M. J. Crosbie
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
D. J. Williams
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
P. A. Lane
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK.
P. O'brien
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, London, SW7 2BP, UK.
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Abstract

The MOCVD technique is being used increasingly for the deposition of electronic ceramics such as Pb(Zr,Ti)O3, Ta2O5 and TiO2. For the mil potential of MOCVD to be realised, it is sometimes necessary to modify existing precursors so that process parameters in the MOCVD process are optimised. In this paper we describe our approach to “molecular design” and discuss how the substitution of simple alkoxide groups by β-diketonates or donor-functionalised ligands can result in precursors with improved physical properties and optimum MOCVD characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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