Published online by Cambridge University Press: 12 July 2012
This paper focuses on developing a robust process to independently control the geometrical parameters of Si nano-pillar (NP) arrays. These parameters include height and diameter of NPs, spacing between them, and the shape of the NPs. We have shown that the diameter, height, and spacing of NPs can be independently engineered by controlling the diameter of nano-beads through synthesis procedure, duration of isotropic SiO2 etching and duration of anisotropic Si etching, respectively.