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Coplanar Capacitors with High Dielectric Constant BaSrTiO3 for Microwave Application

Published online by Cambridge University Press:  10 February 2011

Wei Hu ,
Vladimir Fuflyigin  and
Jim Chi
Wei Hu
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
Vladimir Fuflyigin
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
Jim Chi
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
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Abstract

A coplanar structure is shown to be free of the asymmetrical I-V characteristics normally observed in MIM capacitors with BST inter-electrode dielectric. The low barrier height at the bottom interface is found to be responsible for the asymmetry, which causes increased leakage current and reduced breakdown voltage in one bias polarity. These problems can be eliminated using a coplanar structure, which has been shown elsewhere to have a very low parasitic inductance and a very high resonant frequency. However, these improvements are realized at the cost of a four times reduction of capacitance per unit area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 469
Copyright
Copyright © Materials Research Society 2000

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References

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