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Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD

Published online by Cambridge University Press:  25 February 2011

T. Egawa ,
S. Nozaki ,
N. Noto ,
T. Soga ,
T. Jimbo  and
M. Umeno
T. Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052
N. Noto
Affiliation:
Shin-Etsu Handotai Co., Annaka, Gunma 379-01, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
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Abstract

We have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 273
Copyright
Copyright © Materials Research Society 1989

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