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Correlation Between Plasma Excited States and Thin Film Characteristics in He-SiH4 PECVD

Published online by Cambridge University Press:  21 February 2011

A. Ricard ,
Y. Chouan  and
D. Collobert
A. Ricard
Affiliation:
Plasma Phys. Lab. LA 73, Paris-Sud Univ., 91405 Orsay, France
Y. Chouan
Affiliation:
CNET, Route de Tregastel, BP 40, 22301 Lannion, France
D. Collobert
Affiliation:
CNET, Route de Tregastel, BP 40, 22301 Lannion, France
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Abstract

The excited states of He-5 % SiH4 PECVD have been analysed by emission and absorption spectroscopy.

Variations of spectral line intensities and He(23S) metastable densities have been correlated to the SiH over SiH2 bond ratio and to the deposition speed.

The best correlation has been found with the He excited states, specially He(23S) metastables : SiH films without SiH2 bonds have been obtained when the He(23S) densities reach a minimum value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 285
Copyright
Copyright © Materials Research Society 1985

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References

[1] Ricard, A. ISPC-6 (Montreal 1983) 696-Ricard A., Chouan Y. and Collobert D. Le Vide, les Couches Minces 218 (1983) 453. Ricard A. Ann. Chim. Fr. 8 (1983) 303–318.Google Scholar
[2] Mitchell, A., Zemansky, M. Resonance Radiation and Excited Atoms. Univ. Press Cambridge (1977).Google Scholar
[3] Ferreira, C.M., Ricard, A. J. Appl. Phys. 54 (1983) 2261–71.CrossRefGoogle Scholar