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Correlation of Electrical, Structural, and Optical Properties of Erbium in Silicon

Published online by Cambridge University Press:  25 February 2011

J. L. Benton ,
D. J. Eaglesham ,
M. Almonte ,
P. H. Citrin ,
M. A. Marcus ,
D. L. Adler ,
D. C. Jacobson  and
J. M. Poate
J. L. Benton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Almonte
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. H. Citrin
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. A. Marcus
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. L. Adler
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

An understanding of the electrical, structural, and optical properites of Er in Si is necessary to evaluate this system as an opto-electronic material. Extended x-ray absorption fine structure, EXAFS, measurements of Er-implanted Si show that the optically active impurity complex is Er surrounded by an O cage of 6 atoms. The Er photoluminescence intensity is a square root function of excitation power, while the free exciton intensity increases linearly. The square root dependence of the 1.54μm-intensity is independent of measurement temperature and independent of co-implanted species. Ion-implantation of Er in Si introduces donor activity, but spreading resistance carrier concentration profiles indicate that these donors do not effect the optical activity of the Er.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 447
Copyright
Copyright © Materials Research Society 1993

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