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Correlation of Nanoscale Structure and Magnetic Properties in Manganese Doped Germanium Dilute Magnetic Semiconductors

Published online by Cambridge University Press:  31 January 2011

Li He ,
Wenjing Yin ,
Jiani Yu ,
Jiwei Lu ,
Stuart Wolf  and
Robert Hull
Li He
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Wenjing Yin
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A.
Jiani Yu
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A.
Jiwei Lu
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A.
Stuart Wolf
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A.
Robert Hull
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
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Abstract

Spintronic devices generally require the spin of carriers to be utilized in the storage or manipulation of data. One theoretical model for ferromagnetism in dilute magnetic semiconductors (DMS) results from the percolation of ferromagnetic regions around dilute dopants such as Mn atoms in III-V or group IV materials through the interaction of Mn atoms with carriers. Our work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties. The magnetic properties of 300-350 ºC implanted Ge:Mn (which produced crystalline Ge films) varied significantly with implantation dose and annealing condition due to precipitation and transformation of different MnxGe1-x secondary phases. It was found that Mn substitution of Ge and MnxGe1-x secondary phases can both result in ferromagnetic properties. By combining TEM in-situ annealing and ex-situ magnetic characterization, we have demonstrated detailed correlation of magnetic properties with nanoscale structures in Mn implanted Ge DMS materials.

Keywords

magnetic propertiessecond phasestransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-32
Copyright
Copyright © Materials Research Society 2011

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