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CoSi2 Precipitate Coarsening During Formation of Buried Epitaxial Cosi2 Layers By Ion Beam Synthesis

Published online by Cambridge University Press:  26 February 2011

R. Jebasinski ,
S. Mantl ,
K. Radermacher ,
P. Fichtner ,
W. Jăger  and
Ch. Buchal
R. Jebasinski
Affiliation:
Institut für Schicht-und Ionentechnik,
S. Mantl
Affiliation:
Institut für Schicht-und Ionentechnik,
K. Radermacher
Affiliation:
Institut für Schicht-und Ionentechnik,
P. Fichtner
Affiliation:
Escola de Engenharia UFRGS, 90000 Porto Alegre, Brazil
W. Jăger
Affiliation:
Institut für Festkörperforschung, Forschungszentrurn Jülich, D-5170 Jülich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht-und Ionentechnik,
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Abstract

The coarsening of CoSi2 precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ ions at 350°C and fluences of 1×1016cm−2 and 6×1016cm−2 were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 411
Copyright
Copyright © Materials Research Society 1991

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References

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