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Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum

Published online by Cambridge University Press:  10 February 2011

Andreas Plöbl ,
Heinz Stenzel ,
Qin-Yi Tong ,
Martin Langenkamp ,
Cord Schmidthals  and
Ulrich Gösele
Andreas Plöbl
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
Heinz Stenzel
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
Qin-Yi Tong
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
Martin Langenkamp
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
Cord Schmidthals
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
Ulrich Gösele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06 120 Halle (Saale), Germany
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Abstract

One possibility of a low temperature joining techniques relies on the bonding of atomically clean surfaces. Results on the application of this method to silicon direct bonding are being presented. Clean surfaces for bonding were prepared by ex situ chemical cleaning with ensuing hydrogen passivation and their subsequent activation by thermal desorption of the hydrogen in ultrahigh vacuum (UHV). In UHV at room temperature, the wafers were gently brought into contact to initiate the bonding process. Without any subsequent heat treatment, the adhesive strength thus achieved was equivalent to the cohesion of bulk silicon: covalent bonds join the two crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 141
Copyright
Copyright © Materials Research Society 1998

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