Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-29T23:55:51.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Crack Development in Pulsed Laser-Deposited Pzt Thin Films

Published online by Cambridge University Press:  01 January 1992

H. M. Lee ,
T. J. Chuang ,
C. K. Chiang ,
L. P. Cook  and
P. K. Schenck
H. M. Lee*
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
T. J. Chuang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
C. K. Chiang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
L. P. Cook
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
P. K. Schenck
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
*
+ University of Maryland, College Park, MD
Get access

Abstract

The development of cracks in a PZT thin film prepared by pulsed laser deposition on an unheated Pt-coated silicon substrate, and subsequently crystallized by post-deposition annealing, was investigated as a function of film thickness. As deposited, the film was amorphous. The film was heated at 600°C to produce predominantly ferroelectric crystalline PZT. Spacing, width and morphology of cracks in the film followed a regular progression in which crack area decreased with decreasing film thickness. Data on area shrinkage, as deduced from crack area, were fit equally well as either a linear or a parabolic function of film thickness. It is suggested that crystallization-induced stresses rather than thermal-gradient related stresses, were dominant in the formation of the cracks, and that these stresses were modified by interaction with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 409
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schenck, P. K., Cook, L. P., Chao, J., Farabaugh, E. N., and Chiang, C. K., in “Beam Solid Interactions: Physical Phenomena”, ed. Knapp, J. A., Borgesen, P. and Zuhr, R. A., Mat. Res. Soc., 157, 587, (1990)Google Scholar
2. Brody, P. S., Rod, B. S., Benedetto, J. M., Bennett, K. W., Cook, L. P., Schenck, P. K., Chiang, C. K., and Wong-Ng, W., in Proc. Seventh Intl. Symp. on “Applic. of Ferroelectrics”, Univ. III, Urbana-Champaign, IL., 181, (1990)Google Scholar
3. Cook, L. P., Vaudin, M. D., Schenck, P. K., Wong-Ng, W., Chiang, C. K., Brody, P. S., in “Evolution of Thin Film and Surface Microstructure”, ed. Thompson, C. V., Tsao, J. Y., and Srolovitz, D. J., Mat. Res. Soc. Symp. Pro., 202, 2411, (1991)Google Scholar
4. Chiang, C. K., Cook, L. P., Schenck, P. K., in “Ferroelectric Thin Films”, ed. Myers, E. R. and Kingdon, A. I., Mat. Res. Soc., 200, 133, (1990)Google Scholar
5. Chiang, C. K., Wong-Ng, W., Cook, L. P., Schenck, P. K., Lee, H. M., Brody, P. S., Bennett, K. W., and Rod, B. J., in “Ferroelectric Thin Films II“, ed. Kingon, A. I., Myers, E. R. and Tuttle, B., Mat. Res. Soc. Proc., 243, 519, (1992).Google Scholar
6. Feng, Z.C. and Liu, H. D., J. Appl. Phys. 54, 83, (1983).Google Scholar
7. Suhir, E., J. Appl. Mech., Vol. L5, 143, (1988)Google Scholar
8. Asaoka, K. and Tesk, J. A., Dent. Mate. J., 8, 9, (1989)Google Scholar
9. McMillan, P. W., “Glass-Ceramics”, London, Acad. Press, 110, (1979).Google Scholar