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Crystal Nucleation in Submicron Droplets of PureElements

Published online by Cambridge University Press:  15 February 2011

Louis M. Holzman ,
Thomas F. Kelly  and
W. N. G. Hitchon
Louis M. Holzman
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
Thomas F. Kelly
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706 Materials Science and Engr., University of Wisconsin, Madison, WI 53706
W. N. G. Hitchon
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706 Electrical and Computer Engr., University of Wisconsin, Madison, WI 53706
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Abstract

Liquid-to-crystal nucleation has been studied extensively through dropletexperiments to locate examples of homogeneous nucleation. However, prior tothis work very few examples have been found, which implies that theexperiments have not been able to isolate heterogeneous nucleants in a smallpercentage of the droplets as is required. In this research,electrohydrodynamic atomization (EHD) is used to produce sub-Micron dropletsof pure elements that are largely free of heterogeneous nucleants.

Diffraction patterns of individual EHD-produced droplets are viewed todetermine the fraction of crystalline droplets produced as a function ofdroplet radius. These results are compared to theories for surface andvolume heterogeneous nucleation and for homophase nucleation. It is foundthat Si and Ge nucleate through either homogeneous nucleation or nucleationby homophase impurities. Nucleation results for vanadium and iron were notconclusive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 233
Copyright
Copyright © Materials Research Society 1994

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References

1. TurnbuU, D., J. Appl. Phys. 21, 1022 (1950).Google Scholar
2. Turnbull, D., J. Chem. Phys. 20, 411 (1952).Google Scholar
3. Miyazawa, Y. and Pound, G. M., J. Cryst. Growth 23, 45 (1974).Google Scholar
4. Perepczko, J. H., Mat. Sci. and Engr. 65, 125 (1984).Google Scholar
5. Drehman, A. J. and Turnbull, D., Scripta Metall. 15, 543 (1981).Google Scholar
6. Kim, Y-W., Lin, H.-M., and Kelly, T. F., Acta Metall. 37, 247 (1989).Google Scholar
7. Perel, J., Mahoney, J. F., Kalensher, B. E., Vickers, K. E. and Mehrabian, R., in Rapid Solidification Processing Principles and Technologies. Mehrabian, R., Kear, B. H. and Cohen, M. (Claitor's Publishing Division, Baton Rouge, LA, 1978) 258.Google Scholar
8. Perel, J., Mahoney, J. F., Duwez, P. and Kalensher, B. E., in Rapid Solidification Processing Principles and Technologies II. edited by Mehrabian, R., Kear, B. H. and Cohen, M. (Claitor's Publishing Division, Baton Rouge, LA, 1980) 287.Google Scholar
9. Turnbull, D., Progress in Mat. Sci. - Chalmers Anniversary Volume, 269, (1981).Google Scholar
10. Kelly, T. F., Cohen, M., and Vander, J. B. Sande, Met. Trans. 15A, 819 (1984).Google Scholar
11. Kelly, T. F. and Vander Sande, J. B., Int. J. of Rapid Solid. 3, 51 (1987).Google Scholar