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Crystal Structures and Thermoelectric Properties of Ru1-xRexSiy Chimney-Ladder Compounds

Published online by Cambridge University Press:  26 February 2011

Akira Ishida ,
Norihiko L. Okamoto ,
Kyosuke Kishida ,
Katsushi Tanaka  and
Haruyuki Inui
Akira Ishida
Affiliation:
a.ishida@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan, +81-75-753-5473, +81-75-753-5461
Norihiko L. Okamoto
Affiliation:
nlokamoto@ucdavis.edu, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Kyosuke Kishida
Affiliation:
k.kishida@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Katsushi Tanaka
Affiliation:
k.tanaka@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Haruyuki Inui
Affiliation:
haruyuki.inui@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
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Abstract

The phase relationship of Re-alloyed Ru2Si3 and the variations of the crystal structures and thermoelectric properties of the Ru1-xRexSiy chimney-ladder phases have been studied as a function of the Re concentration. The Ru1-xRexSiy chimney-ladder phases are formed in a wide compositional range. Compositional formula of the chimney-ladder phases are determined to be Ru1-xRexSi1.5386+0.1783x (0.14 ≤ x ≤ 0.76), which are systematically deviated from the idealized composition conforming the valence electron counting rule: VEC=14. Measurements of thermoelectric properties of single crystals with different compositions reveals that the chimney-ladder phases exhibit n-type semiconducting behavior at low Re concentrations and p-type semiconducting behavior at high Re concentrations. These results suggests that the VEC=14 rule can be used for predicting the semiconducting behavior of the chimney-ladder phases through the adjustment of VEC values by substituting elements, producing p-type semiconductors for VEC<14 and n-type for VEC>14, with the carrier concentration related to the deviation from VEC=14.

Keywords

crystallographic structurethermoelectricitytransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 980: Symposium II – Advanced Intermetallic-Based Alloys , 2006 , 0980-II05-37
Copyright
Copyright © Materials Research Society 2007

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References

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