Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-29T23:59:59.913Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystalline and Electrical Properties of ITO Semiconductive Films deposited by Atmospheric RF Plasma Technique

Published online by Cambridge University Press:  15 February 2011

R. W. Moss ,
S. Misture ,
D. H. Lee ,
R. A. Condrate Sr.  and
X. W. Wang
R. W. Moss
Affiliation:
Alfred University, Alfred, New York, 14802
S. Misture
Affiliation:
Alfred University, Alfred, New York, 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, New York, 14802
R. A. Condrate Sr.
Affiliation:
Alfred University, Alfred, New York, 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, New York, 14802
Get access

Abstract

Indium tin oxide (ITO) semiconductive films were deposited by an atmospheric RF plasma technique. Indium-to-tin (In:Sn) ratios varied from 10:0 to 0:10. A small amount of antimony was doped into some ITO samples for comparative studies. Substrate materials were soda-lime-silicate (SLS) float glass and fused silica glass. Structural, electrical, and optical properties were dependent on the In:Sn ratio, precursor material feeding rate, oxygen feeding rate, and other deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 851
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wang, X. W., Zhong, H. M., and Snyder, R. L., Appl. Phys. Lett. 57 1581 (1990).Google Scholar
2.Lee, D. H., Vuong, K. D., Williams, J. A. A., Fagan, J., Condrate, R. A. Sr, and Wang, X. W., J. Mater. Res. 11 895 (1996).Google Scholar
3.Lee, D.H., Moss, R.W., Vuong, K.D., Condrate, R. A. Sr, and Wang, X. W., to be published in Thin Solid Films.Google Scholar