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Crystallization, Doping, Orientation and Grain-Size of Microcrystalline Silicon and Germanium

Published online by Cambridge University Press:  21 February 2011

Raphael Tsu  and
S. P. Brazil
Raphael Tsu
Affiliation:
Instituto de Fisica e Quimica de Sāo Carlos, Universidade de Sāo Paulo, Sāo Carlos
S. P. Brazil
Affiliation:
Energy Conversion-Devices Inc. Troy, MI 48084 U.S.A.
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Abstract

Preparation and characterization of microcrystalline silicon are discussed. In addition to the usual characterization techniques using TEM,X-ray, Auger, etc., Raman scattering and electro-reflectance measurements have been extensively incorporated into routine analyses. In particular, conductivity percolation, detection of trace crystallites in an amorphous matrix, measurements of grain-size, doping as well as preferred orientation are fully discussed. The single most important effect on the properties of microcrystalline Si and Ge is the presence of impurities. Thus better technical performances must be preceded by an improvement in vacuum and purer gases used in deposition systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 383
Copyright
Copyright © Materials Research Society 1985

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