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Crystallization Of Amorphous Tungsten Disilicide. Stacking Faults And Resistivity

Published online by Cambridge University Press:  26 February 2011

F. K. LeGoues ,
F. M. d'Heurle ,
R. Joshi  and
Ilka Suni
F. K. LeGoues
Affiliation:
IBM T.J. Watson Research Center, PO 218, Yorktown Heights, N.Y.10598
F. M. d'Heurle
Affiliation:
IBM T.J. Watson Research Center, PO 218, Yorktown Heights, N.Y.10598
R. Joshi
Affiliation:
IBM T.J. Watson Research Center, PO 218, Yorktown Heights, N.Y.10598
Ilka Suni
Affiliation:
Technical Research Center of Finland, Semiconductor Laboratory, Otakaari 7B, SF-02150, Espoo, Finland
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Abstract

Films of WSi, have been investigated by electron microscopy after annealing at different temperatures. It is shown that films annealed at 550°C contain a high density of stacking faults. The crystalline identity of these stacking faults has been established. Undoubtedly the high density of stacking faults is the cause of the resistivity maximum observed in films annealed at 550°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 51
Copyright
Copyright © Materials Research Society 1986

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References

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