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CuIn1−XGaXSe2-Based Photovoltaic Cells From Electrodeposited Precursor Films

Published online by Cambridge University Press:  21 March 2011

Raghu N. Bhattacharya  and
Arturo M. Fernandez
Raghu N. Bhattacharya
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA
Arturo M. Fernandez
Affiliation:
on sabbatical leave from: CIE-UNAM, Temixco, Morelos, Mor 62580, Mexico
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Abstract

We have developed an electrodeposition bath based on a buffer solution so that the stability of the electrodeposition process is enhanced and no metal oxides or hydroxides precipitate out of solution. The buffer-solution-based bath also deposits more gallium in the precursor films. Asdeposited precursors are stoichiometric or slightly Cu-rich CuIn1−XGaXSe2 (CIGS). Only a minimal amount of indium was added to the electrodeposited precursor films by physical vapor deposition to obtain a 9.4%-efficient device.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.10
Copyright
Copyright © Materials Research Society 2001

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References

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