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CVD of Amorphous GeTe Thin Films

Published online by Cambridge University Press:  01 February 2011

Philip S Chen ,
William J Hunks ,
Matthias Stender ,
Tianniu Chen ,
Gregory T Stauf ,
Chongying Xu  and
Jeffrey F Roeder
Philip S Chen
Affiliation:
pchen@atmi.com, ATMI, ATD, 7 Commerce Dr., Danbury, CT, 06810, United States
William J Hunks
Affiliation:
whunks@atmi.com, ATMI, Danbury, CT, 06810, United States
Matthias Stender
Affiliation:
mstender@atmi.com, ATMI, Danbury, CT, 06810, United States
Tianniu Chen
Affiliation:
tchen@atmi.com, ATMI, Danbury, CT, 06810, United States
Gregory T Stauf
Affiliation:
gstauf@atmi.com, ATMI, Danbury, CT, 06810, United States
Chongying Xu
Affiliation:
cxu@atmi.com, ATMI, Danbury, CT, 06810, United States
Jeffrey F Roeder
Affiliation:
jroeder@atmi.com, ATMI, Danbury, CT, 06810, United States
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Abstract

This is the first submission

Keywords

chemical vapor deposition (CVD) (deposition)GeTe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F09-10
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Lee, J. I. Park, H. Cho, S. L. Park, Y. L. Bae, B. J. Park, J. H. Park, J. S. An, H. G. Bae, J. S. Ahn, D. H. Kim, Y. T. Horii, H. Song, S. A. Shin, J. C. Park, S. O. Kim, H. S. Chung, U-In., Moon, J. T. and Ryu, B. I. 2007 Symposium of VLSI Technology Digest of Technical Papers, 6B-4.Google Scholar
2. Breitwisch, M. Nirschl, T. Chen, C.F. Zhu, Y. Lee, M.H. Lamorey, M. Burr, G.W. Joseph, E. Schrott, A. Philipp, J.B. Cheek, R. Happ, T.D. Chen, S.H. Zaidi, S. Flaitz, P. Bruley, J. Dasaka, R. Rajendran, B. Rossnagel, S. Yang, M. Chen, Y.C. Bergmann, R. Lung, H.L. and Lam, C. 2007 Symposium of VLSI Technology Digest of Technical Papers, 6B-3.Google Scholar