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CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

Published online by Cambridge University Press:  21 March 2011

Benjamin Mailly Giacchetti ,
Allen Hsu ,
Han Wang ,
Ki Kang Kim ,
Jing Kong  and
Tomas Palacios
Benjamin Mailly Giacchetti
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States. Materials Science, Massachusetts Institute of Technology, Cambridge, MA, United States.
Allen Hsu
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Han Wang
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Ki Kang Kim
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Jing Kong
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
Tomas Palacios
Affiliation:
Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States.
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Abstract

This paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

Keywords

chemical vapor deposition (CVD) (chemical reaction)sensorelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1283: Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability , 2011 , mrsf10-1283-b03-07
Copyright
Copyright © Materials Research Society 2011

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References

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