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DCD and Low T Pl Determination of Bandgap Dependence on Composition for Mocvd Grown InGaAs/InP

Published online by Cambridge University Press:  26 February 2011

I. C. Bassignana ,
C. J. Miner  and
N. Puetz
I. C. Bassignana
Affiliation:
Bell-Northern Research, P.O. Box 3500, Ottawa, Canada K1Y 4H7
C. J. Miner
Affiliation:
Bell-Northern Research, P.O. Box 3500, Ottawa, Canada K1Y 4H7
N. Puetz
Affiliation:
Bell-Northern Research, P.O. Box 3500, Ottawa, Canada K1Y 4H7
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Abstract

This work reports a detailed study of the bound exciton recombination energy measured by low temperature (7K) photoluminescence, as a function of the relative lattice mismatch between the InGaAs epitaxial layers and the substrate measured by double crystal x-ray diffraction. Nominally undoped lμm and 2μm epitaxial layers of InGaAs/InP were grown by metal organic chemical vapor deposition (MOCVD). All InGaAs epitaxial layers used in this study show a single narrow rocking curve peak (FWHM < 25 arc-sec) and only a single narrow PL peak (FWHM < 2.5 meV). Near lattice match the PL energy varies linearly with the mismatch but the absolute value of the PL energy at lattice match is a function of the type of substrate used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 197
Copyright
Copyright © Materials Research Society 1988

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References

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