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The Deep 0.11eV Manganese Acceptor Level in GaAs

Published online by Cambridge University Press:  25 February 2011

M. Kleverman ,
E. Janzén ,
M. Linnarsson  and
B. Monemar
M. Kleverman
Affiliation:
Lund University, Dept of Solid State Physics, S-22l 00 LUND, Sweden
E. Janzén
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology, S-58l 83 LINKÖPING, Sweden
M. Linnarsson
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology, S-58l 83 LINKÖPING, Sweden
B. Monemar
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology, S-58l 83 LINKÖPING, Sweden
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Abstract

The 0.11 eV Mn acceptor has been investigated using different kinds of FΠR techniques, Zeeman spectroscopy, and photoluminescence. The results clearly fits into the Зd5+ shallow hole model for Mn° and show that the 0.11 eV level originates from the io-nization of a neutral, substitutional Mn acceptor at a Ga-site. The ground state binding energy obtained from the effective-mass like excited states is 112.4 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 207
Copyright
Copyright © Materials Research Society 1990

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