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Deep-UV, Light-Assisted, Wet Etching of Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

D. V. Podlesnik ,
H. H. Gilgen  and
R. M. Osgood
D. V. Podlesnik
Affiliation:
Department of Electrical Engineering, Columbia UniversityNew York, NY 10027
H. H. Gilgen
Affiliation:
Department of Electrical Engineering, Columbia UniversityNew York, NY 10027
R. M. Osgood
Affiliation:
Department of Electrical Engineering, Columbia UniversityNew York, NY 10027
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Abstract

Deep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical conditions. A correlation between the UV absorption in different etching solutions and the light-enhanced etching rates is examined. Gratings with 100-nm resolution have been produced and high-aspect-ratio via-holes have been etched.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 161
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Ng, W., Hong, C., and Yariv, A., IEEE Trans. Electron Devices ED–25, 1193, (1978).Google Scholar
2. D'Asaro, L.A., DiLorenzo, T.V., and Fuki, H., IEEE Trans. Electron Devices ED–25, 1218 (1978).Google Scholar
3. Tyagai, V.A., Sterligov, V.A., Kolbasov, G.Ya., and Snitko, O.V., Sov. Phys. Semicond. 7, 440 (1973).Google Scholar
4. Kuhn-Kuhnenfeld, F., J. Electrochem. Soc. 119, 1063 (1972).Google Scholar
5. Osgood, R.M., Sanchez-Rubio, A., Ehrlich, D.J., and Daneu, V., Appl. Phys. Lett. 40, 391 (1982).Google Scholar
6. Podlesnik, D.V., Gilgen, H.H., Osgood, R.M., Sanchez, A., and Daneu, V., Mat. Res. Soc. Symp. Proc. 17, 57–63 (1983).CrossRefGoogle Scholar
7. Podlesnik, D.V., Gilgen, H.H., Osgood, R.M. and Sanchez, A., Appl. Phys. Lett. 43, (1983).Google Scholar
8. Tisone, G.C. and Wayne Johnson, A., Appl. Phys. Lett. 42, 530 (1983).CrossRefGoogle Scholar
9. Phillip, H.R. and Ehrenreich, H., Phys. Rev. 129, 1550 (1963).Google Scholar
10. Ida, S. and Ito, K., J. Electrochem. Soc. 118, 768 (1971).CrossRefGoogle Scholar