Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-22T16:32:39.715Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect and Island Formation in Stranski-Krastanov Growth of Ge on Si (001)

Published online by Cambridge University Press:  15 February 2011

Akira Sakai  and
Toru Tatsumi
Akira Sakai
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Toru Tatsumi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

We have examined macroscopic island (Macro-island) formation in Stranski-Krastanov (SK) growth of Ge on Si (001) surfaces at various growth temperatures in molecular beam epitaxy (MBE). The nucleation mode of Macro-island formation was observed to be predominantly heterogeneous at medium growth temperatures less than 450°C, but homogeneous at high temperatures. In the heterogeneous Mode, Macro-island formation is mediated by particular V-shaped defects running preferentially along the <110> direction, which form as a result of coalescence of the well-faceted islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 343
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Asai, M., Ueda, H., and Tatsuyama, C., J. Appl. Phys. 58, 2577 (1985).Google Scholar
2. Krishnamurthy, M., Drucker, J.S., and Venables, J.A., J. Appl. Phys. 69, 6461 (1991).CrossRefGoogle Scholar
3. Mo, Y.-W., Savage, D.E., Swartzentruber, B.S., and Lagally, M.G., Phys. Rev. Lett. 65, 1020 (1990).CrossRefGoogle Scholar
4. Iwawaki, F., Tomitori, M., and Nishikawa, O., Ultramicroscopy 42–44, 902 (1992); Surf. Sci. Lett. 253, L411 (1991).CrossRefGoogle Scholar
5. Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990).CrossRefGoogle Scholar
6. Williams, A.A., Thornton, J.M.C., Macdonald, J.E., van Silfhout, R.G., van der Veen, J.F., Finney, M.S., Johnson, A.D., and Noiss, C., Phys. Rev. B 43, 5001 (1991).Google Scholar
7. Tatsumi, T., Hirayama, H., and Aizaki, N., Appl. Phys. Lett. 50, 1234 (1987).Google Scholar
8. Tatsumi, T., Aizaki, N., and Tsuya, H., Jpn. J. Appl. Phys. 24, L277 (1985).Google Scholar
9. LeGoues, F.K., Copel, M., and Tromp, R., Phys. Rev. Lett. 63, 1826 (1989); Phys. Rev. B 42, 11690 (1990).Google Scholar
10. Men, F.K., Packard, W.E., and Webb, M.B., Phys. Rev. Lett. 61, 2469 (1988);Google Scholar
Swarzentruber, B.S., Mo, Y.-W., Webb, M.B., and Lagally, M.G., J. Vac. Sci. Technol. A 8, 210 (1990);CrossRefGoogle Scholar
Webb, M.B., Men, F.K., Swarzentruber, B.S., and Lagally, M.G., J. Vac. Sci. Technol. A 8, 2658 (1990).Google Scholar
11. Alerhand, O.L., Vanderbilt, D., Meade, R.D., and Joannopoulos, J.D., Phys. Rev. Lett. 61, 1973 (1988);Google Scholar
Meade, R.D. and Vanderbit, D., in Proceeding of the Twentieth International Conference on the Physics of Semiconductors, edited by Anastassakis, E.M. and Joannopoulos, J.D. (World Science, Singapore, 1990) pp.123–126.Google Scholar
12. Eaglesham, D.J. and Cerullo, M., Appl. Phys. Lett. 58, 2276 (1991).Google Scholar
13. Christian, J.W., in The Theory of Transformation in metals and Alloys PART I. 2nd ed. (Pergamon Press, Oxford, 1981) pp.448.Google Scholar