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Defect Creation and Photoablation in Stoichiometric and Sub-Stoichiometric SiO2

Published online by Cambridge University Press:  28 February 2011

R. A. B. Devine  and
C. Fiori
R. A. B. Devine
Affiliation:
Cnet, B.P. 98, 38243Meylan Cedex, France
C. Fiori
Affiliation:
Cnet, B.P. 98, 38243Meylan Cedex, France
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Abstract

It is demonstrated that microscopic point defects can be created in amorphous silica using pulsed ultraviolet irradiation (λ = 248 nm) at energy densities ∼ 100 times less than those normally estimated to lead to damage creation. Identification of the physical character of the defects has been made using electron spin resonance spectroscopy and electrical measurement techniques. Continued irradiation of the SiO2 is found to lead to photoablation. Results obtained for bulk dry SiO2, thermal SiO2 and vacuum deposited SiOx are presented. The important role of non-stoichiometry (defect structure) in the process of photoablation is clearly manifested by comparison of the results obtained for the different types of SiO2. Possible physical mechanisms involved are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 303
Copyright
Copyright © Materials Research Society 1986

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