Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-22T08:07:31.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Equilibration and Metastability in Low-Spin-Density a-Si:H

Published online by Cambridge University Press:  21 February 2011

T. J. McMahon
T. J. McMahon*
Affiliation:
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO 80401
Get access

Abstract

To first order, the relaxation kinetics of thermally generated defects with spin observed in two differently prepared, 60-μm-thick undoped hydrogenated amorphous silicon (a-Si:H) films are consistent with a two-level system having a formation energy of 0.35 eV and an anneal barrier of 2.1 eV. However, closer examination of how relaxation depends on thermal treatments reveals the complexity that might be expected from a disordered material. For example, the stabilization of many spins quenched in from 260°C can be increased by annealing at an intermediate temperature: It appears that, some 260°C defects equilibrating further at 205°C will relax and become more locked-in configurationally than defects simply equilibrated at 260°C. Crossover of annealing data is the result. Crossover cannot be explained with two-level system approaches. Models in which a spin can be stabilized with alternate structural configurations must be invoked.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 57
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. McMahon, T.J., Proc. PVAR&D Mtg., Denver CO (Sept 1990) to be published in Solar CellsGoogle Scholar
2. Kakalios, J., Street, R.A., and Jackson, W.B., Phys. Rev Lett. 59, 1037 (1987)Google Scholar
3. Street, R.A. and Winer, K., Phys. Rev. B40, 6236 (1989)Google Scholar
4. Crandall, R.S., Phys. Rev. B43, 4057 (1991)Google Scholar
5. Palmer, R.G., Stein, D.L., Abrahams, E. and Anderson, P.W., Phys. Rev. Lett. 53, 958 (1984)Google Scholar
6. McMahon, T.J., Proc. of Int'l Mtg. on Stability of a-Si:H Materials and Solar Cells, Denver CO (Feb 1991)Google Scholar