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Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

Published online by Cambridge University Press:  21 March 2011

R. Yakimova ,
M. Syväjärvi ,
H. Jacobsson ,
A. Kakanakova-Georgieva ,
T. Tuomi ,
S. Rendakova ,
V. Dmitriev  and
E. Janzén
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
M. Syväjärvi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
H. Jacobsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
A. Kakanakova-Georgieva
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, FIN-02150 Espoo, Finland
S. Rendakova
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U.S.A.
V. Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U.S.A.
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
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Abstract

The objective of this work is to study defect occurrence and appearance in thick sublimation epitaxial layers grown on top of LPE layers with different thickness and substrates with reduced micropipe density. Data from growth on C-terminated surfaces are also presented. The results were analyzed with the aid of optical microscopy, SEM images, HRXRD and synchrotron white beam X-ray topography. A pronounced effect of the LPE (buffer) layer surface roughness on formation of dislocations and micropipes is observed in the sublimation epitaxy layers. While with increasing the thickness of the buffer layer the efficiency of the micropipe reduction increases, the structure quality of the top sublimation epilayer degrades. LPE layers with a thickness of 0.1 μm appear to be the best compromise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.1
Copyright
Copyright © Materials Research Society 2001

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References

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