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Defect Induced Amortization in Silicon: A Tight BindingMolecular Dynamics Simulation

Published online by Cambridge University Press:  15 February 2011

D. Maric  and
L. Colombo
D. Maric
Affiliation:
Swiss Scientific Computing Center, CH-6928 Manno (Switzerland)
L. Colombo
Affiliation:
Dipartimento di Fisica, Universita' di Milano, via Celoria 16,1–20133 Milano (Italy)
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Abstract

We present an investigation on the amorphization process of crystallinesilicon induced by ion beam bombardment by simulating the insertion ofself-interstitials at different temperatures. The simulation is carried outby tight-binding molecular dynamics which allows for a detailedcharacterization of the chemical bonding and electronic properties of theirradiated samples. The irradiation process consists of two steps: (i)insertion of defects at a constant rate; (ii) annealing of the sample andobservation of its structural properties. Thanks to the large size of thesimulation cell (up to 276 atoms) we can characterize the amorphous networkboth on the short-range and Medium-range length scale. Electronic propertiesare investigated as well and their evolution is monitored during theinsertion process. Finally, we present a thorough comparison of thestructural properties of the irradiated sample with amorphous silicon asobtained by rapid quench from the Melt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 423
Copyright
Copyright © Materials Research Society 1994

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References

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