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Defect Luminescence in Films Containing Ge and GeO2 Nanocrystals

Published online by Cambridge University Press:  15 February 2011

M. Zacharias ,
S. J. Atherton  and
P. M. Fauchet
M. Zacharias
Affiliation:
Institute of Experimental Physics, Otto-v.-Guericke University, 39016 Magdeburg, Germany Department of Electrical Engineering, University of Rochester, Rochester, NY 14627, USA
S. J. Atherton
Affiliation:
Department of Chemistry, University of Rochester, Rochester, NY 14627, USA
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627, USA
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Abstract

Amorphous SiOx alloys containing Ge or GeO2 nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photo luminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing GeO2 crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO2) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matrix interface or in the matrix itself.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 379
Copyright
Copyright © Materials Research Society 1997

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References

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