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Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth

Published online by Cambridge University Press:  01 February 2011

X. Ni ,
Ü. Özgür ,
Y. Fu ,
N. Biyikli ,
H. Morkoç  and
Z. Liliental-Weber
X. Ni
Affiliation:
nix@vcu.edu, Virginia Commonwealth University, Dept. of Electrical Engineering, 601 W Main St.,, Richmond, VA, 23284, United States
Ü. Özgür
Affiliation:
uozgur@vcu.edu, Virginia Commonwealth University, Dept. of Electrical Engineering, 601 W Main St.,, Richmond, VA, 23284, United States
Y. Fu
Affiliation:
fuy@vcu.edu, Virginia Commonwealth University, Dept. of Electrical Engineering, 601 W Main St.,, Richmond, VA, 23284, United States
N. Biyikli
Affiliation:
nbiyikli@vcu.edu, Virginia Commonwealth University, Dept. of Electrical Engineering, 601 W Main St.,, Richmond, VA, 23284, United States
H. Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Dept. of Electrical Engineering, 601 W Main St.,, Richmond, VA, 23284, United States
Z. Liliental-Weber
Affiliation:
Z_Liliental-Weber@lbl.gov, Lawrence Berkeley National laboratory, Berkeley, CA, 94720, United States
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Abstract

We report a two-step growth method to obtain uniformly coalesced epitaxial lateral overgrown a-plane GaN by metalorganic chemical vapor deposition (MOCVD). By obtaining a large wing height to width aspect ratio in the first step followed by enhanced lateral growth in the second step via controlling the growth temperature, we reduced the tilt angle between the advancing Ga-polar and N-polar wings for improved properties. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing area was 1.0×108cm−2, more than two orders of magnitude lower than that in the window area (4.2×1010cm−2). However, a high density of basal stacking faults, 1.2×104cm−1, was still observed in the wing area. Near field scanning optical microscopy (NSOM) at room temperature revealed that the luminescence was mainly from the wing regions with very little contribution from the windows and meeting fronts. These observations suggest that due to significant reduction of threading dislocations radiative recombination is enhanced in the wings.

Keywords

metalorganic depositiontransmission electron microscopy (TEM)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-51
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Langer, R., Simon, J., Ortiz, V., Pelekanos, N. T., Barski, A., Andre, R., and Godlewski, M., Appl. Phys. Lett 74, 3827 (1999).Google Scholar
2 Deguchi, T., Sekiguchi, K., Nakamura, A., Sota, T., Matsuo, R., Chichibu, S., and Nakamura, S., Jpn. J. Appl. Phys. Part 2-Lett. 38 (8B), L914 (1999).Google Scholar
3 Ng, H. M., Bell, A. and Ponce, F. A., Chu, S. N. G., Appl. Phys. Lett. 83, 653 (2003).Google Scholar
4 Koida, T., Chichibu, S. F., Sota, T., Craven, M. D., Haskell, B. A., Speck, J. S., DenBaars, S. P., and Nakamura, S., Appl. Phys. Lett. 84, 3768 (2004)Google Scholar
5 Chitnis, A., Chen, C., Adivarahan, V., Shatalov, M., Kuokstis, E., Mandavilli, V., Yang, J., and Khan, M. A., Appl. Phys. Lett. 84, 3663 (2004).Google Scholar
6 Craven, M. D., Lim, S. H., Wu, F., Speck, J. S., and DenBaars, S. P., Appl. Phys. Lett. 81, 1201 (2002).Google Scholar
7 Chen, C., Yang, J., Wang, H., Zhang, J., Adivarahan, V., Gaevski, M., Kuokstis, E., Gong, Z., Su, M. and Khan, M. A., Jpn. J. Appl. Phys. 42, L640 (2003).Google Scholar
8 Fini, P., Marchand, H., Ibbetson, J. P., DenBaars, S. P., Mishra, U.K., Speck, J. S., J. Cryst. Growth. 209, 581 (2000).Google Scholar
9 Ni, X., Fu, Y., Moon, Y. T., Biyikli, N., Morkoç, H., J. Cryst. Growth 290, 166 (2006).Google Scholar
10 Liliental-Weber, Z., Zakharov, D., Wagner, B., and Davis, R.F., Proceedings of the SPIE (2005).Google Scholar
11 Hull, D. and Bacon, D.J., Introduction to Dislocation (Pergamon Press, Oxford, 1984).Google Scholar