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Defect Structure at Buried Silicon Nitride Layers

Published online by Cambridge University Press:  25 February 2011

E.H. Te Kaat  and
J. Belz
E.H. Te Kaat
Affiliation:
Institute of Physics, University of Dortmund, POB 500500, D-4600 Dortmund 50, Fed., Republic of Germany
J. Belz
Affiliation:
Institute of Physics, University of Dortmund, POB 500500, D-4600 Dortmund 50, Fed., Republic of Germany
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Abstract

Buried insulating silicon nitride layers are formed by a 400°C N+-implantation at 150 keV with fluences from 0.35 to 1×1018 N+/cm2 and subsequent anneal at 1200°C in dry nitrogen. TEM and AES measurements on bevelled samples yield a correlation of ion and damage profiles to local defect structures. Low dose implantation results in polycrystalline precipitates of scaled spherulitic structure. High dose continuous polycrystalline nitride layers have good insulation properties following a 5 hour anneal. During anneal, the common asymmetrical ion depth profile transforms to a nearly rectangular profile. The silicon surface layer contains 106 to 108 dislocations/cm2, which seem to be passivated, since detrimental effects on electronic devices have not been measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 329
Copyright
Copyright © Materials Research Society 1985

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References

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