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Defects and Growth of Diamond Wafers

Published online by Cambridge University Press:  21 February 2011

D. Shechtman
D. Shechtman*
Affiliation:
Department of Materials Engineering, Technion, Haifa, Israel. Currently at JHU, NIST and NRL.
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Abstract

Crystallographic defects which form during growth of CVD diamond were studied and their effect on the surface structure of the growing wafer evaluated. The most abundant defects are β=3 twins boundaries whose density is very high at the nucleation side and as low as one twin per 10 /μm at the growth surface. The intersection of these twin boundaries with one another results in a formation of higher order twin boundaries. β=9 as well as β=27 and β=81 boundaries have been analyzed. The surface crystallography of optical quality diamond wafers reveals the role of β=3 twins in promoting fast growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 297
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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