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Defects and Phase Change Induced by Giant Electronic Excitations With GeV Ions And 30MeV Cluster Beam

Published online by Cambridge University Press:  15 February 2011

P. Thevenard ,
M. Beranger ,
B. Canut ,
S. M. M. Ramos ,
N. Bonardi  and
G. Fuchs
P. Thevenard
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
M. Beranger
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
B. Canut
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
S. M. M. Ramos
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
N. Bonardi
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
G. Fuchs
Affiliation:
Département de Physique des MatériauxUniversité Claude Bernard LYON I69622 VILLEURBANNE, FRANCE, pthev@dpm.univ-lyonl.fr
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Abstract

MgO and LiNbO 3 single crystals were bombarded with GeV swift heavy ions (Pb, Gd) and 30MeV C60 clusters to study the damage production induced by giant electronic processes at stopping power up to 100keV/nm. The defect creation was characterized by optical absorption, transmission electron microscopy (TEM) and Rutherford backscattering spectrometry in channeling geometry (RBS-C). In MgO point defects (F type centers) and extended defects (dislocation loops) were created by ionization processes in addition to those associated with nuclear collisions. The F-center concentration induced by electronic energy excitations was studied at different temperatures and as a function of the particle electronic energy losses. TEM revealed that dislocation loops were produced close to the particle trajectories and amorphization was never observed. On the opposite, in LiNbO3 continuous amorphous tracks were evidenced above a threshold near 5keV/nm. The dependance of this effects with various solid state parameters will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 721
Copyright
Copyright © Materials Research Society 1997

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