Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-10T09:55:55.947Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation and Recovery of Si1−xGex Devices by Irradiation

Published online by Cambridge University Press:  15 February 2011

H. Ohyama ,
J. Vanhellemont ,
Y. Takami ,
K. Hayama ,
T. Kudo ,
T. Hakata ,
K. Kobayashi ,
H. Sunaga ,
I. Hironaka  and
J. Poortmans
...Show all authors
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto, 861–11, Japan
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Takami
Affiliation:
Rikkyo University, 2-5-1, Nagasaka Yokosuka Kanagawa, 240-01, Japan
K. Hayama
Affiliation:
Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto, 861–11, Japan
T. Kudo
Affiliation:
Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto, 861–11, Japan
T. Hakata
Affiliation:
Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto, 861–11, Japan
K. Kobayashi
Affiliation:
NEC IC Microcomputer Systems, Ltd., 2081-24 Tabaru Mashiki Kumamoto 861-22, Japan
H. Sunaga
Affiliation:
Takasaki JAERI, 1233 Watanuki Gunma, 370-12, Japan
I. Hironaka
Affiliation:
Sanko Industrial Corporation, 4-23-7 Obiyama Kumamoto 862, Japan
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

Results are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device performance and the generation of lattice defects are reported as a function of germanium content and radiation source. Isochronal annealing is performed to study the recovery behavior of the irradiated devices. The radiation source dependence of the degradation is discussed taking into account the absorbed energy dunng irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 365
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohyama, H., Vanhellemont, H. Sunaga, Poortmans, J., Caymax, M. and Clauws, P., IEEE Trans. Nucl. Sci., 41, 487 (1994).Google Scholar
2. Ohyama, H., Vanhellemont, Y. Takami, Hayama, K., Sunaga, H., Poortmans, J., Caymax, M. and Clauws, P., IEEE Trans. Nucl. Sci., 41, 2437 (1994).Google Scholar
3. Ohyama, H., Vanhellemont, Y. Takami, Hayama, K., Sunaga, H., Poortmans, J. and Caymax, M., accepted for presentation at the 32nd Annual international Nuclear and Space Radiation Effects Conference, NSREC '95, Madison USA, July 17-21, 1995.Google Scholar