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Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

Published online by Cambridge University Press:  31 January 2011

Yuki Watabe ,
Taku Tajima  and
Tohru Nakamura
Yuki Watabe
Affiliation:
yuki.watabe.no@gs-eng.hosei.ac.jp, Hosei University, Tokyo, Japan
Taku Tajima
Affiliation:
taku.tajima.km@gs-eng.hosei.ac.jp, Hosei University, Tokyo, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei University, Tokyo, Japan
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Abstract

Degradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2×1017/cm3 and a maximum emitter concentration of 4×1019/cm3 for ion implanted 4H-SiC BJTs.

Keywords

Scdevicessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B08-04
Copyright
Copyright © Materials Research Society 2010

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References

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