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A Dehydrogenation and Annealing Method of a-Si by Microwave

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-H Jeon ,
C-H Kim  and
M-K Han
C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
J-H Jeon
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
C-H Kim
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
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Abstract

We propose a new method for selective crystallization of amorphous silicon and source/drain ion impurities activation by microwave annealing. We have measured FTIR to investigate hydrogen content variation in PECVD a-Si film and examined the poly-Si grain structure by SEM. We have also observed the Raman spectroscopy in order to investigate the grain growth mechanism during microwave annealing.

In our experiment, a-Si layer between microwave absorbing layers was fully crystallized in 60 seconds and hydrogen content of a-Si under microwave reflective layer was not varied after 20 minutes microwave annealing. These results indicate that proposed method may be implemented for fabricating a-Si and poly-Si TFTs on the same glass substrate. We have fabricated the poly-Si and a-Si TFTs employing microwave annealing for active layer crystallization and source/drain activation by our method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 115
Copyright
Copyright © Materials Research Society 1998

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References

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