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Dependence of 1.00 MeV Proton Radiation Resistance of a-Si:H Alloy Solar Cells on Cell Thickness

Published online by Cambridge University Press:  21 February 2011

James R. Woodyard
James R. Woodyard*
Affiliation:
Institute for Manufacturing Research and Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
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Abstract

Rutherford bacJcscattering spectrometry has been used to determine the role of thickness and composition on the radiation resistance of a-Si:H based alloy solar cells. Single and dual-junction cells with thicknesses between about 0.23 and 1.1 microns were studied. Cells were irradiated with 1.00 MeV protons using fluences between 1E13 and 1E15 cm-2; the radiation resistance was determined using J-V measurements. The fluences produced significant changes in Jsc. Cells with thicknesses in the 0.23 to 0.69 micron range degraded about the same when irradiated with the same fluences; thicker single-junction cells degraded with both thickness and fluence. Thirty percent Ge in a-Six,Ge1-x:H cells results in poorer radiation resistance. It appears that Ge is more effective than Si in stabilizing 1.00 MeV proton-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1151
Copyright
Copyright © Materials Research Society 1992

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Footnotes

*

This work was supported by the TRW Engineering & Test Division, NASA under contract NAG 3–833 and the Wayne State University, Institute for Manufacturing Research.

References

REFERENCES

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