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Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers

Published online by Cambridge University Press:  01 February 2011

S. Hernández ,
R. Cuscó ,
L. Artús ,
K.P. O'Donnell ,
R.W. Martin ,
I.M. Watson ,
Y. Nanishi ,
M. Kurouchi  and
W. Van der Stricht
S. Hernández
Affiliation:
Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, Scotland, United Kingdom.
R. Cuscó
Affiliation:
Institut Jaume Almera (CSIC), C. Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain.
L. Artús
Affiliation:
Institut Jaume Almera (CSIC), C. Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain.
K.P. O'Donnell
Affiliation:
Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, Scotland, United Kingdom.
R.W. Martin
Affiliation:
Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G4 0NG, Scotland, United Kingdom.
I.M. Watson
Affiliation:
Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, United Kingdom.
Y. Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-higashi, Kusatsu 525–8577, Japan.
M. Kurouchi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-higashi, Kusatsu 525–8577, Japan.
W. Van der Stricht
Affiliation:
University of Ghent, Ghent, Belgium.
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Abstract

The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.22
Copyright
Copyright © Materials Research Society 2005

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References

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