Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-22T19:44:56.471Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and Characterization of Near “Intrinsic” μc-Si Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition - RPECVD

Published online by Cambridge University Press:  21 February 2011

M. J. Williams ,
C. Wang  and
G. Lucovsky
M. J. Williams
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
C. Wang
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
Get access

Abstract

Undoped films of μc-Si deposited by RPECVD are n-type with a room temperature dark conductivity of ∼6×10-4 S/cm and an activation energy of ∼0.3 eV. This is due to native donor-like defects. We report on the conductivity and photoconductivity of boron-doped μc-Si, with emphasis on low doping levels that are designed to compensate exactly these native donor-like defects. We describe the dark conductivity and the photoconductivity as functions of dark conductivity activation energy and the average boron concentration, and present a model for the photoconductivity based on band off sets between the crystalline and amorphous regions of the μc-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 389
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spear, W.E. and LeComber, P.G. in The Physics of Hydrogenated Amorphous Silicon I, ed. Joannopoulos, J.D. and Lucovsky, G. (Springer Verlag, Berlin, 1984), p. 63 Google Scholar
2. Wang, C., Williams, M.J. and Lucovsky, G., J. Vac. Sci. Technol. A (1991), in press.Google Scholar
3. Lucovsky, G., Wang, C. and Williams, M.J., Solar Cells (1991), in press.Google Scholar
4. Williams, M.J., Wang, C. and Lucovsky, G., at International Conference on Stability of Amorphous Silicon Materials and Solar Cells, Denver, CO, Feb. 20–22 1991.Google Scholar
5. Lucovsky, G., Tsu, D.V., Rudder, R.A. and Markunas, R.J. in Thin Film Process II, ed. by Vossen, J.L. and Kern, W. (Academic Press, New York, 1991), p. 565.Google Scholar
6. Lucovsky, G. and Wang, C., these proceedingsGoogle Scholar
7. The SIMS measurements were performed by Charles Magee at Evans East, Inc.Google Scholar
8. LeComber, P.G., Willeke, G. and Spear, W.E., J. Non-Cryst. Solids 59&60, 795 (1983).Google Scholar